For the aim of helping the development of robots used in Radiological Emergency Planning and Preparedness, the Total Ionizing Dose (TID) effects on the threshold voltage shift (ΔVth) of different kinds of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with different geometry and different scaling technology was compared. The different gate width and length dependent between bulk Complementary Metal-Oxide-Semiconductor Transistor (CMOS) process and nanowire (NW) MOSFET as well as higher and lower technology node is noticed. The reason of this difference is explained from the aspects of Radiation Induced Narrow channel effect (RINCE) and Radiation Induced Short channel effect (RISCE). It is found that some studies in recent years have corrected the influence of negative bias temperature instability (NBTI) when considering radiation effects. The TID effects on ΔVth of several kinds of new devices such as MOSFETs with new layout geometry as well as Ge-channel and GaN channel MOSFETs are described which can be investigated more deeply.