Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.
- Design Engineering Division and Computers and Information in Engineering Division
Optimization of Chemical Vapor Deposition Process
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George, P, Gea, HC, & Jaluria, Y. "Optimization of Chemical Vapor Deposition Process." Proceedings of the ASME 2006 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. Volume 1: 32nd Design Automation Conference, Parts A and B. Philadelphia, Pennsylvania, USA. September 10–13, 2006. pp. 309-316. ASME. https://doi.org/10.1115/DETC2006-99748
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