Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.
Skip Nav Destination
ASME 2006 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
September 10–13, 2006
Philadelphia, Pennsylvania, USA
Conference Sponsors:
- Design Engineering Division and Computers and Information in Engineering Division
ISBN:
0-7918-4255-X
PROCEEDINGS PAPER
Optimization of Chemical Vapor Deposition Process
Pradeep George,
Pradeep George
Rutgers University, Piscataway, NJ
Search for other works by this author on:
Hae Chang Gea,
Hae Chang Gea
Rutgers University, Piscataway, NJ
Search for other works by this author on:
Yogesh Jaluria
Yogesh Jaluria
Rutgers University, Piscataway, NJ
Search for other works by this author on:
Pradeep George
Rutgers University, Piscataway, NJ
Hae Chang Gea
Rutgers University, Piscataway, NJ
Yogesh Jaluria
Rutgers University, Piscataway, NJ
Paper No:
DETC2006-99748, pp. 309-316; 8 pages
Published Online:
June 3, 2008
Citation
George, P, Gea, HC, & Jaluria, Y. "Optimization of Chemical Vapor Deposition Process." Proceedings of the ASME 2006 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. Volume 1: 32nd Design Automation Conference, Parts A and B. Philadelphia, Pennsylvania, USA. September 10–13, 2006. pp. 309-316. ASME. https://doi.org/10.1115/DETC2006-99748
Download citation file:
3
Views
0
Citations
Related Proceedings Papers
Related Articles
Control of Thin Film Growth in Chemical Vapor Deposition Manufacturing Systems: A Feasibility Study
J. Manuf. Sci. Eng (August,2002)
Parametric Modeling and Optimization of Chemical Vapor Deposition Process
J. Manuf. Sci. Eng (February,2009)
Development of G-Helix Structure as Off-Chip Interconnect
J. Electron. Packag (June,2004)
Related Chapters
Insulating Properties of W-Doped Ga2O3 Films Grown on Si Substrate for Low-K Applications
International Conference on Advanced Computer Theory and Engineering, 4th (ICACTE 2011)
Lay-Up and Start-Up Practices
Consensus on Operating Practices for Control of Water and Steam Chemistry in Combined Cycle and Cogeneration
Numerical Simulation Research on a Fixed Bed Gasifier
International Conference on Information Technology and Management Engineering (ITME 2011)