Abstract

It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

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