Abstract

In this paper, we present a simple method to determine thermal conductivity coefficients (TCC) of thin films with a compact characterization microstructure and by using common measuring apparatus. The microstructure can be fabricated by a simple surface micromachining technique and in situ along with active devices on the same chip. Analytical expressions are derived to calculate the thermal conductivity coefficients of thin films from the experimental data. Experimental results with a heavily n-doped LPCVD poly crystalline silicon film are used herein to demonstrate the effectiveness of the proposed method. The obtained thermal conductivity coefficient seems to decrease a little as temperature increase and the average is around 39 Wm−1 °C−1 at 400°C below.

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