The thermal conductivity of bilayer graphene (BLG) and few-layer graphene (FLG) samples supported on a silicon dioxide (SiO2) bridge has been measured in the temperature range between 80 K and 375 K. In the experiments, resistance heater and thermometer lines at the two ends of the bridge were used to implement steady-state thermal conductance measurements of the sample before and after the graphene on the bridge was etched away. The obtained thermal conductivity of the supported graphene increases and the temperature for the peak thermal conductivity decreases with increasing layer thickness. Compared to the reported thermal conductivity of suspended FLG samples, the opposite behavior observed here for the supported FLG reveals that interaction with the SiO2 support and also possibly polymer residue on top of the FLG sample suppresses the thermal conductivity of the supported FLG more than interlayer interaction within the FLG. The linear rise of thermal conductivity with layer number up to 8 layers suggests that the scattering effects due to substrate and polymer residue penetrates much more than 4 layers into a multilayer flake.
Thermal Transport Measurements of Bilayer and Few-Layer Graphene Supported on Silicon Dioxide
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Sadeghi, MM, & Shi, L. "Thermal Transport Measurements of Bilayer and Few-Layer Graphene Supported on Silicon Dioxide." Proceedings of the ASME 2011 International Mechanical Engineering Congress and Exposition. Volume 10: Heat and Mass Transport Processes, Parts A and B. Denver, Colorado, USA. November 11–17, 2011. pp. 361-368. ASME. https://doi.org/10.1115/IMECE2011-64227
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