The gold-gold thermocompression process for power heterostructure bipolar transistor (HBT) flip chip has been modelled and simulated by finite element method. A model for plated gold creep has been determined on the basis of empirical data and model comparison. This model seems suited for gold-gold thermocompression process optimization.
Finite Element Modelling of Flip Chip Gold-Gold Thermocompression Bonding
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received November 2002. Associate Editor: L. Ernst.
Puigcorbe´ , J., Marco , S., Leseduarte , S., Carmona, M., Vendier , O., Devron, C., Delage , S. L., Floriot, D., and Blanck, H. (December 15, 2003). "Finite Element Modelling of Flip Chip Gold-Gold Thermocompression Bonding ." ASME. J. Electron. Packag. December 2003; 125(4): 549–555. https://doi.org/10.1115/1.1604157
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