This work presents an experimental study to enhance the thermal contact conductance of high performance thermal interface materials (TIMs) using gallium alloy. In this experiment, the gallium alloy-based TIMs are synthesized by a micro-oxidation reaction method, which consists of gallium oxides (Ga2O3) dispersed uniformly in gallium alloys. An experimental apparatus is designed to measure the thermal resistance across the gallium alloy-based TIMs under steady-state conditions. The existence of Ga2O3 can effectively improve the wettability of gallium alloys with other materials. For example, they have a better wettability with copper and anodic coloring 6063 aluminum-alloy without any extrusion between the interface layers. Gallium binary alloy-based TIMs (GBTIM) or ternary alloy based-TIMs (GTTIM) are found to increase the operational temperature range comparing with that of the conventional thermal greases. The measured highest thermal conductivity is as high as 19.2 Wm−1K−1 for GBTIM at room temperature. The wide operational temperature, better wettability, and higher thermal conductivity make gallium alloy-based TIMs promising for a wider application as TIMs in electronic packaging areas. The measured resistance is found to be as low as 2.2 mm2 KW−1 for GBTIM with a pressure of 0.05 MPa, which is much lower than that of the best commercialized thermal greases. In view of controlling pollution and raw materials wasting, the gallium alloy-based TIMs can be cleaned by 30% NaOH solution, and the pure gallium alloys are recycled, which can satisfy industrial production requirements effectively.
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March 2017
Research-Article
Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials
Yunxia Gao,
Yunxia Gao
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: yxgao@issp.ac.cn
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: yxgao@issp.ac.cn
Search for other works by this author on:
Xianping Wang,
Xianping Wang
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: xpwang@issp.ac.cn
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: xpwang@issp.ac.cn
Search for other works by this author on:
Jing Liu,
Jing Liu
Key Laboratory of Cryogenics,
Technical Institute of Physics and Chemistry,
Chinese Academy of Sciences,
Beijing 100190, China;
Technical Institute of Physics and Chemistry,
Chinese Academy of Sciences,
Beijing 100190, China;
Department of Biomedical Engineering,
Tsinghua University,
Beijing 100084, China
Tsinghua University,
Beijing 100084, China
Search for other works by this author on:
Qianfeng Fang
Qianfeng Fang
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
Search for other works by this author on:
Yunxia Gao
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: yxgao@issp.ac.cn
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: yxgao@issp.ac.cn
Xianping Wang
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: xpwang@issp.ac.cn
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
e-mail: xpwang@issp.ac.cn
Jing Liu
Key Laboratory of Cryogenics,
Technical Institute of Physics and Chemistry,
Chinese Academy of Sciences,
Beijing 100190, China;
Technical Institute of Physics and Chemistry,
Chinese Academy of Sciences,
Beijing 100190, China;
Department of Biomedical Engineering,
Tsinghua University,
Beijing 100084, China
Tsinghua University,
Beijing 100084, China
Qianfeng Fang
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
Institute of Solid State Physics,
Chinese Academy of Sciences,
Hefei 230031, China
1Corresponding authors.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received August 18, 2016; final manuscript received October 8, 2016; published online November 23, 2016. Assoc. Editor: Ashish Gupta.
J. Electron. Packag. Mar 2017, 139(1): 011002 (8 pages)
Published Online: November 23, 2016
Article history
Received:
August 18, 2016
Revised:
October 8, 2016
Citation
Gao, Y., Wang, X., Liu, J., and Fang, Q. (November 23, 2016). "Investigation on the Optimized Binary and Ternary Gallium Alloy as Thermal Interface Materials." ASME. J. Electron. Packag. March 2017; 139(1): 011002. https://doi.org/10.1115/1.4035025
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