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Journal Articles

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Jr., Martin Florovič, Juraj Marek, Ľuboš Černaj, Daniel Donoval, Jaroslav Kováč, Christian Dua, Sylvain L. Delage, Jean-Claude Jacquet
Journal: Journal of Electronic Packaging
Publisher: ASME
Article Type: Research-Article
J. Electron. Packag. September 2019, 141(3): 031007.
Paper No: EP-18-1093
https://doi.org/10.1115/1.4043477
Published Online: May 17, 2019
View Article titled, Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation
Open the PDF for Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation in another window
Topics: Gallium nitride, Heat, Simulation, Temperature, Transistors, Temperature distribution, Temperature measurement, Thermal properties, Gates (Closures), Thermal analysis